Silicon Carbide Mirror
The main application areas of silicon carbide chips include LED solid-state lighting and high-frequency devices. This material has excellent characteristics such as band gap,drift velocity, breakdown, thermal conductivity, and high temperature resistance, which are several times higher than traditional silicon. It has irreplaceable advantages in electronic applications such as high temperature, high voltage, high frequency, high-power, photoelectric, radiation resistance, and microwave properties, and in extreme environments such as aerospace, military industry, and nuclear energy.
| Parameters of pressureless sintered silicon carbide | ||
| Project | Unit | SSiC |
| Bulk density | g/m³ | 3.10 ~ 3.15 |
| Vickers hardness | HY | 2500 |
| Rockwell hardness | HRA | 94 |
| Apparent porosity | % | <0.2 |
| Compressive strength | Mpa | >3000 |
| Flexural strength | Mpa | >400 |
| Free silicon content | % | <0.1 |
| Purity (%) Silicon carbide content | % | ≥99 |
| Elastic modulus | Gpa | 410 |
| Berzambi | 0.14 | |
| Thermal conductivity coefficient | Cal/cm.s.℃ | 0.30 |
| Coefficient of thermal expansion | i/℃ | 4.3*10-6 |
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Silicon Carbide Mirror
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